high-power gaalas ir emitters od-880f anode (case) .017 .100 cathode . 036 . 041 45 glass dome 1.00 min. .030 .040 .197 .205 .015 .209 .220 .183 .186 .152 .154 features high reliability liquid-phase epitaxially grown gaalas 880nm peak emission for optimum matching with odd-45w photodiode wide range of linear power output hermetically sealed to-46 package narrow angle for long distance applications all surfaces are gold plated. dimensions are nominal values in inches unless otherwise specified. window caps are welded to the case. total power output, p o radiant intensity, i e peak emission wavelength, p spectral bandwidth at 50%, ? half intensity beam angle, forward voltage, v f reverse breakdown voltage, v r capacitance, c rise time fall time i f = 100ma i f = 50ma i f = 100ma i r = 10a v r = 0v 15 120 5 17 135 880 80 8 1.55 30 17 0.5 0.5 1.9 mw mw/sr nm nm deg volts volts pf sec sec electro-optical characteristics at 25c parameters test conditions min typ max units storage and operating temperature range maximum junction temperature thermal resistance, r thja 1 thermal resistance, r thja 2 -55c to 100c 100c 350c/w typical 115c/w typical thermal parameters 1 heat transfer minimized by measuring in still air with minimum heat conducting through leads 2 air circulating at a rapid rate to keep case temperature at 25c power dissipation 1 continuous forward current peak forward current (10 s, 400hz) 2 reverse voltage lead soldering temperature (1/16" from case for 10sec) 190mw 100ma 3a 5v 260c absolute maximum ratings at 25c case 1 derate per thermal derating curve above 25c 2 derate linearly above 25c rohs revision february 26, 2013 750 mitchell road, newbury park, california 91320 phone: (805) 499-0335, fax: (805) 499-8108 email: sales@optodiode.com, website: www.optodiode.com end of life december 2013
high-power gaalas ir emitters od-880f degradation curve forward i-v characteristics spectral output power output vs temperature power output vs forward current relative power output (%) stress time, (hrs) 10 1 100 forward current, i f (amps) forward voltage, v f (volts) 0 4 relative power output ambient temperature (c) ?50 1.5 relative power output (%) wavelength, (nm) 750 100 power output, p o (mw) forward current, i f (ma) 10 1,000 90 80 70 60 50 10 2 10 3 10 4 10 5 i f = 20ma i f = 50ma i f = 100ma 3 2 1 0 1 2 3 4 5 6 800 850 900 950 1,000 80 60 40 20 0 100 10 1 100 1,000 10,000 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 ?25 0 25 50 75 100 t case = 25c no pre burn-in performed thermal derating curve duty cycle, d (%) 0.01 0.1 1 maximum peak pulse current 10 100 peak forward current, i p (amps) 0.1 0.01 10 1 ambient temperature (c) 25 50 75 100 power dissipation (mw) 180 80 60 40 20 0 200 160 140 120 100 t = 10s t = 100s t = 500s t t i p d = t t relative power output (%) beam angle, (deg) ?25 100 80 60 40 20 0 ?20 ?15 ?10 ?5 0 5 10 15 20 25 radiation pattern no heat sink infinite heat sink dc pulse 10s, 100hz maximum ratings typical characteristics revision february 26, 2013 750 mitchell road, newbury park, california 91320 phone: (805) 499-0335, fax: (805) 499-8108 email: sales@optodiode.com, website: www.optodiode.com end of life december 2013
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